Formation and stability of point defects in monolayer rhenium disulfide

S. Horzum,1,2,* D. Çakır,1 J. Suh,3 S. Tongay,3,4 Y.-S. Huang,5 C.-H. Ho,5 J. Wu,3,4,6 H. Sahin,1,† and F. M. Peeters1,‡ 1Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium 2Department of Engineering Physics, Faculty of Engineering, Ankara University, 06100 Ankara, Turkey 3Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA 4State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, Peoples Republic of China 5Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan 6Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA (Received 6 February 2014; revised manuscript received 14 April 2014; published 28 April 2014)